Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations
نویسندگان
چکیده
منابع مشابه
Tunnel Field Effect Transistor (TFET) with Strained Silicon Thinfilm Body for Enhanced Drain Current and Pragmatic Threshold Voltage
Quantum tunneling devices are very promising as they have very low leakage current and show good scalability. However, the most serious drawback for tunneling devices hampering their wide-scale CMOS application is their low on-current and high threshold voltage. In this paper, we propose a novel lateral Strained Double-Gate Tunnel Field Effect Transistor (SDGTFET), which not only tackles these ...
متن کاملStrained Silicon Photonics
A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, t...
متن کاملWafer Bonding and Strained-Layer Silicon
s of the Invited Presentations Vienna University of Technology April 10 and 11, 2003 Society for Microelectronics Vienna, 2003 Society for Microelectronics c/o Institute of Industrial Electronics and Material Science Vienna University of Technology Gusshausstraße 27–29/366 A-1040 Vienna, Austria
متن کاملStrained Silicon-On-Insulator – Fabrication and Characterization
SSOI substrates were successfully fabricated using He ion implantation and annealing to relax thin (< 500nm) SiGe buffer layers, bonding and layer transfer processes to realize strained-Si layers onto oxide layers. The reduced thickness of the SiGe buffer possess numerous advantages such as reduced process costs for epitaxy and for reclaim of the handle wafer if the layer splitting is initiated...
متن کاملKinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys
Point-defect-mediated diffusion processes are investigated in strained SiGe alloys using kinetic lattice Monte Carlo KLMC simulation technique. The KLMC simulator incorporates an augmented lattice domain and includes defect structures, atomistic hopping mechanisms, and the stress dependence of transition rates obtained from density functional theory calculation results. Vacancy-mediated interdi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2018
ISSN: 2168-6734
DOI: 10.1109/jeds.2018.2825639